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Lattice location of implanted Cu in highly doped Si
We report on the lattice location of ion-implanted $^{67}$Cu in $p^{+}$- and $n^{+}$-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both $p^{+}$- and $n^{+}$-Si. Annealing in the temperature range 200-...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.1314876 http://cds.cern.ch/record/638166 |