Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling

The lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}...

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Detalles Bibliográficos
Autores principales: De Vries, B, Wahl, U, Vantomme, A, Correia, J G
Lenguaje:eng
Publicado: 2003
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1002/pssc.200390086
http://cds.cern.ch/record/638171
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author De Vries, B
Wahl, U
Vantomme, A
Correia, J G
author_facet De Vries, B
Wahl, U
Vantomme, A
Correia, J G
author_sort De Vries, B
collection CERN
description The lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}$Pm were measured using a position-sensitive detector following 60 keV room temperature implantation at a dose of 1 $\times 10^{13}$ cm$^{-2}$ and annealing at 900°C. The emission patterns around the [0001], [1102], [1101], and [2113] crystal axes give direct evidence that the majority (70%) of Nd and Pm atoms occupy substitutional Ga sites.
id cern-638171
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
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spelling cern-6381712019-09-30T06:29:59Zdoi:10.1002/pssc.200390086http://cds.cern.ch/record/638171engDe Vries, BWahl, UVantomme, ACorreia, J GLattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channelingCondensed MatterThe lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}$Pm were measured using a position-sensitive detector following 60 keV room temperature implantation at a dose of 1 $\times 10^{13}$ cm$^{-2}$ and annealing at 900°C. The emission patterns around the [0001], [1102], [1101], and [2113] crystal axes give direct evidence that the majority (70%) of Nd and Pm atoms occupy substitutional Ga sites.CERN-OPEN-2003-032oai:cds.cern.ch:6381712003-08-18
spellingShingle Condensed Matter
De Vries, B
Wahl, U
Vantomme, A
Correia, J G
Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
title Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
title_full Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
title_fullStr Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
title_full_unstemmed Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
title_short Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
title_sort lattice location of implanted $^{147}$nd and $^{147*}$pm in gan using emission channeling
topic Condensed Matter
url https://dx.doi.org/10.1002/pssc.200390086
http://cds.cern.ch/record/638171
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AT wahlu latticelocationofimplanted147ndand147pminganusingemissionchanneling
AT vantommea latticelocationofimplanted147ndand147pminganusingemissionchanneling
AT correiajg latticelocationofimplanted147ndand147pminganusingemissionchanneling

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