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Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
The lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1002/pssc.200390086 http://cds.cern.ch/record/638171 |