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Implantation site of rare earths in single-crystalline ZnO
The lattice location of rare earth $^{167m}$Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope $^{167}$Tm at doses of 1.3-2.8 $\times10^{13}$ cm$^{-2}$ and annealing up to 900°C, th...
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
2003
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1063/1.1555283 http://cds.cern.ch/record/638172 |
Sumario: | The lattice location of rare earth $^{167m}$Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope $^{167}$Tm at doses of 1.3-2.8 $\times10^{13}$ cm$^{-2}$ and annealing up to 900°C, the angular distribution of conversion electrons emitted by the radioactive isotope $^{167m}$Er was measured by a position-sensitive electron detector. The conversion electron emission patterns from $^{167m}$Er around the [0001], [1102], [1101] and [2113] directions give direct evidence that the large majority of Er atoms (75-90%) occupies substitutional Zn sites. |
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