Lattice location and optical activation of rare earth implanted GaN

This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following l...

Descripción completa

Detalles Bibliográficos
Autores principales: Wahl, U, Alves, E, Lorenz, K, Correia, J G, Monteiro, T, De Vries, B, Vantomme, A, Vianden, R
Lenguaje:eng
Publicado: 2003
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1016/j.mseb.2003.08.031
http://cds.cern.ch/record/638268
_version_ 1780900665389744128
author Wahl, U
Alves, E
Lorenz, K
Correia, J G
Monteiro, T
De Vries, B
Vantomme, A
Vianden, R
author_facet Wahl, U
Alves, E
Lorenz, K
Correia, J G
Monteiro, T
De Vries, B
Vantomme, A
Vianden, R
author_sort Wahl, U
collection CERN
description This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (around 10$^{13}$ cm$^{-2}$) implantation, both in the as-implanted state and after annealing up to 900°C, the lattice location of higher-dose implants (10$^{14}-10^{15}$ cm$^{-2}$) and their defect annealing behaviour were studied using the Rutherford backscattering/channeling method. The available channeling and luminescence results suggest that the optical activation of implanted REs in GaN is related to their incorporation in substitutional Ga sites combined with the effective removal of the implantation damage.
id cern-638268
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling cern-6382682019-09-30T06:29:59Zdoi:10.1016/j.mseb.2003.08.031http://cds.cern.ch/record/638268engWahl, UAlves, ELorenz, KCorreia, J GMonteiro, TDe Vries, BVantomme, AVianden, RLattice location and optical activation of rare earth implanted GaNCondensed MatterThis paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (around 10$^{13}$ cm$^{-2}$) implantation, both in the as-implanted state and after annealing up to 900°C, the lattice location of higher-dose implants (10$^{14}-10^{15}$ cm$^{-2}$) and their defect annealing behaviour were studied using the Rutherford backscattering/channeling method. The available channeling and luminescence results suggest that the optical activation of implanted REs in GaN is related to their incorporation in substitutional Ga sites combined with the effective removal of the implantation damage.CERN-OPEN-2003-037oai:cds.cern.ch:6382682003-08-19
spellingShingle Condensed Matter
Wahl, U
Alves, E
Lorenz, K
Correia, J G
Monteiro, T
De Vries, B
Vantomme, A
Vianden, R
Lattice location and optical activation of rare earth implanted GaN
title Lattice location and optical activation of rare earth implanted GaN
title_full Lattice location and optical activation of rare earth implanted GaN
title_fullStr Lattice location and optical activation of rare earth implanted GaN
title_full_unstemmed Lattice location and optical activation of rare earth implanted GaN
title_short Lattice location and optical activation of rare earth implanted GaN
title_sort lattice location and optical activation of rare earth implanted gan
topic Condensed Matter
url https://dx.doi.org/10.1016/j.mseb.2003.08.031
http://cds.cern.ch/record/638268
work_keys_str_mv AT wahlu latticelocationandopticalactivationofrareearthimplantedgan
AT alvese latticelocationandopticalactivationofrareearthimplantedgan
AT lorenzk latticelocationandopticalactivationofrareearthimplantedgan
AT correiajg latticelocationandopticalactivationofrareearthimplantedgan
AT monteirot latticelocationandopticalactivationofrareearthimplantedgan
AT devriesb latticelocationandopticalactivationofrareearthimplantedgan
AT vantommea latticelocationandopticalactivationofrareearthimplantedgan
AT viandenr latticelocationandopticalactivationofrareearthimplantedgan

Ejemplares similares