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Er-O clustering and its influence on the lattice sites of Er in Si

We present emission channeling experiments on the lattice location of Er in CZ Si single crystals with a well-defined O concentration of 6.5-6.6 $\times 10^{17}$ cm$^{-3}$ and 60 keV-implanted Tm+Er doses ranging from 4.3 $\times 10^{12}$ cm$^{-2}$ to 3.6 $\times 10^{13}$ cm$^{-2}$. The experimental...

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Detalles Bibliográficos
Autores principales: Wahl, U, Correia, J G, Araújo, J P, Vantomme, A, Langouche, G
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0921-4526(99)00472-X
http://cds.cern.ch/record/638440

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