Synthesis of tantalum nitride diffusion barriers for Cu metal by plasma immersion ion implantation

A Tantalum nitride diffusion barrier layer for copper metal was synthesized by Plasma Immersion Ion Implantation technique (PIII). Effect of nitrogen dose in Ta layer was investigated in improving its diffusion barrier properties. Silicon wafers coated with Ta were implanted with nitrogen at two dif...

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Detalles Bibliográficos
Autores principales: Kumar, M, Rajkumar, Kumar, D, George, P J, Paul, A K
Lenguaje:eng
Publicado: 2002
Materias:
XX
Acceso en línea:http://cds.cern.ch/record/645354

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