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Bias dependent radiation damage in high resistivity silicon diodes irradaiated with heavily charged particles
Planar diodes were irradiated with neutrons and pions to different fluences. Bias dependent effective dopant concentration after irradiation was found.
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/683908 |
| Sumario: | Planar diodes were irradiated with neutrons and pions to different fluences. Bias dependent effective dopant concentration after irradiation was found. |
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