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Bias dependent radiation damage in high resistivity silicon diodes irradaiated with heavily charged particles

Planar diodes were irradiated with neutrons and pions to different fluences. Bias dependent effective dopant concentration after irradiation was found.

Detalles Bibliográficos
Autores principales:	Cindro, V, Kramberger, G, Mikuz, M, Tadel, M, Zontar, D
Lenguaje:	eng
Publicado:	1999
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/683908

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