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The ATLAS Silicon Pixel Sensors
Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple sca...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(00)00574-X http://cds.cern.ch/record/683924 |
| _version_ | 1780901376798228480 |
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| author | Alam, M S Ciocio, A Einsweiler, K F Emes, J Gilchriese, M G D Joshi, A Kleinfelder, S A Marchesini, R McCormack, F Milgrome, O Palaio, N Pengg, F Richardson, J Zizka, G Ackers, M Andreazza, A Comes, G Fischer, P Keil, M Klasen, V Kühl, T Meuser, S Ockenfels, W Raith, B Treis, J Wermes, N Gössling, C Hügging, F G Wüstenfeld, J Wunstorf, R Barberis, D Beccherle, R Darbo, G Gagliardi, G Gemme, C Morettini, P Musico, P Osculati, B Parodi, F Rossi, L Blanquart, L Breugnon, P Calvet, D Clemens, J-C Delpierre, P A Hallewell, G D Laugier, D Mouthuy, T Rozanov, A Valin, I Aleppo, M Caccia, M Ragusa, F Troncon, C Lutz, Gerhard Richter, R H Rohe, T Brandl, A Gorfine, G Hoeferkamp, M Seidel, SC Boyd, GR Skubic, P L Sícho, P Tomasek, L Vrba, V Holder, M Ziolkowski, M D'Auria, S del Papa, C Charles, E Fasching, D Becks, K H Lenzen, G Linder, C |
| author_facet | Alam, M S Ciocio, A Einsweiler, K F Emes, J Gilchriese, M G D Joshi, A Kleinfelder, S A Marchesini, R McCormack, F Milgrome, O Palaio, N Pengg, F Richardson, J Zizka, G Ackers, M Andreazza, A Comes, G Fischer, P Keil, M Klasen, V Kühl, T Meuser, S Ockenfels, W Raith, B Treis, J Wermes, N Gössling, C Hügging, F G Wüstenfeld, J Wunstorf, R Barberis, D Beccherle, R Darbo, G Gagliardi, G Gemme, C Morettini, P Musico, P Osculati, B Parodi, F Rossi, L Blanquart, L Breugnon, P Calvet, D Clemens, J-C Delpierre, P A Hallewell, G D Laugier, D Mouthuy, T Rozanov, A Valin, I Aleppo, M Caccia, M Ragusa, F Troncon, C Lutz, Gerhard Richter, R H Rohe, T Brandl, A Gorfine, G Hoeferkamp, M Seidel, SC Boyd, GR Skubic, P L Sícho, P Tomasek, L Vrba, V Holder, M Ziolkowski, M D'Auria, S del Papa, C Charles, E Fasching, D Becks, K H Lenzen, G Linder, C |
| author_sort | Alam, M S |
| collection | CERN |
| description | Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired. |
| id | cern-683924 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1999 |
| record_format | invenio |
| spelling | cern-6839242019-09-30T06:29:59Zdoi:10.1016/S0168-9002(00)00574-Xhttp://cds.cern.ch/record/683924engAlam, M SCiocio, AEinsweiler, K FEmes, JGilchriese, M G DJoshi, AKleinfelder, S AMarchesini, RMcCormack, FMilgrome, OPalaio, NPengg, FRichardson, JZizka, GAckers, MAndreazza, AComes, GFischer, PKeil, MKlasen, VKühl, TMeuser, SOckenfels, WRaith, BTreis, JWermes, NGössling, CHügging, F GWüstenfeld, JWunstorf, RBarberis, DBeccherle, RDarbo, GGagliardi, GGemme, CMorettini, PMusico, POsculati, BParodi, FRossi, LBlanquart, LBreugnon, PCalvet, DClemens, J-CDelpierre, P AHallewell, G DLaugier, DMouthuy, TRozanov, AValin, IAleppo, MCaccia, MRagusa, FTroncon, CLutz, GerhardRichter, R HRohe, TBrandl, AGorfine, GHoeferkamp, MSeidel, SCBoyd, GRSkubic, P LSícho, PTomasek, LVrba, VHolder, MZiolkowski, MD'Auria, Sdel Papa, CCharles, EFasching, DBecks, K HLenzen, GLinder, CThe ATLAS Silicon Pixel SensorsDetectors and Experimental TechniquesPrototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.ATL-INDET-99-012CERN-EP-99-152oai:cds.cern.ch:6839241999-09-14 |
| spellingShingle | Detectors and Experimental Techniques Alam, M S Ciocio, A Einsweiler, K F Emes, J Gilchriese, M G D Joshi, A Kleinfelder, S A Marchesini, R McCormack, F Milgrome, O Palaio, N Pengg, F Richardson, J Zizka, G Ackers, M Andreazza, A Comes, G Fischer, P Keil, M Klasen, V Kühl, T Meuser, S Ockenfels, W Raith, B Treis, J Wermes, N Gössling, C Hügging, F G Wüstenfeld, J Wunstorf, R Barberis, D Beccherle, R Darbo, G Gagliardi, G Gemme, C Morettini, P Musico, P Osculati, B Parodi, F Rossi, L Blanquart, L Breugnon, P Calvet, D Clemens, J-C Delpierre, P A Hallewell, G D Laugier, D Mouthuy, T Rozanov, A Valin, I Aleppo, M Caccia, M Ragusa, F Troncon, C Lutz, Gerhard Richter, R H Rohe, T Brandl, A Gorfine, G Hoeferkamp, M Seidel, SC Boyd, GR Skubic, P L Sícho, P Tomasek, L Vrba, V Holder, M Ziolkowski, M D'Auria, S del Papa, C Charles, E Fasching, D Becks, K H Lenzen, G Linder, C The ATLAS Silicon Pixel Sensors |
| title | The ATLAS Silicon Pixel Sensors |
| title_full | The ATLAS Silicon Pixel Sensors |
| title_fullStr | The ATLAS Silicon Pixel Sensors |
| title_full_unstemmed | The ATLAS Silicon Pixel Sensors |
| title_short | The ATLAS Silicon Pixel Sensors |
| title_sort | atlas silicon pixel sensors |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/S0168-9002(00)00574-X http://cds.cern.ch/record/683924 |
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