Signals in non-irradiated and irradiated single sided silicon detectors

A simulation of signals in silicon microstrip detectors ($p^+-n-n^+$) has been written. Electron-hole pairs are created by electrons from $^{90}$Sr beta source with Landau fluctuations considered. Simulated induced currents calculated according to Ramo's theoremare integrated and shaped. For irradiated sensors, trapping is included in the drift simulation. Using many Monte Carlo generated events, detector's charge collection efficiencyis calculated as a function of shaping time, applied voltage, and temperature. Results are compared with CCE measurements of unirradiated and irradiated strip detectors using 25ns shaping (SCT 32A) readout chip.