Signals in non-irradiated and irradiated single sided silicon detectors

A simulation of signals in silicon microstrip detectors ($p^+-n-n^+$) has been written. Electron-hole pairs are created by electrons from $^{90}$Sr beta source with Landau fluctuations considered. Simulated induced currents calculated according to Ramo's theoremare integrated and shaped. For ir...

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Detalles Bibliográficos
Autores principales: Kramberger, G, Cindro, V, Mikuz, M
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)00776-2
http://cds.cern.ch/record/684087
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author Kramberger, G
Cindro, V
Mikuz, M
author_facet Kramberger, G
Cindro, V
Mikuz, M
author_sort Kramberger, G
collection CERN
description A simulation of signals in silicon microstrip detectors ($p^+-n-n^+$) has been written. Electron-hole pairs are created by electrons from $^{90}$Sr beta source with Landau fluctuations considered. Simulated induced currents calculated according to Ramo's theoremare integrated and shaped. For irradiated sensors, trapping is included in the drift simulation. Using many Monte Carlo generated events, detector's charge collection efficiencyis calculated as a function of shaping time, applied voltage, and temperature. Results are compared with CCE measurements of unirradiated and irradiated strip detectors using 25ns shaping (SCT 32A) readout chip.
id cern-684087
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-6840872019-09-30T06:29:59Zdoi:10.1016/S0168-9002(00)00776-2http://cds.cern.ch/record/684087engKramberger, GCindro, VMikuz, MSignals in non-irradiated and irradiated single sided silicon detectorsDetectors and Experimental TechniquesA simulation of signals in silicon microstrip detectors ($p^+-n-n^+$) has been written. Electron-hole pairs are created by electrons from $^{90}$Sr beta source with Landau fluctuations considered. Simulated induced currents calculated according to Ramo's theoremare integrated and shaped. For irradiated sensors, trapping is included in the drift simulation. Using many Monte Carlo generated events, detector's charge collection efficiencyis calculated as a function of shaping time, applied voltage, and temperature. Results are compared with CCE measurements of unirradiated and irradiated strip detectors using 25ns shaping (SCT 32A) readout chip.ATL-INDET-2000-015oai:cds.cern.ch:6840872000-06-02
spellingShingle Detectors and Experimental Techniques
Kramberger, G
Cindro, V
Mikuz, M
Signals in non-irradiated and irradiated single sided silicon detectors
title Signals in non-irradiated and irradiated single sided silicon detectors
title_full Signals in non-irradiated and irradiated single sided silicon detectors
title_fullStr Signals in non-irradiated and irradiated single sided silicon detectors
title_full_unstemmed Signals in non-irradiated and irradiated single sided silicon detectors
title_short Signals in non-irradiated and irradiated single sided silicon detectors
title_sort signals in non-irradiated and irradiated single sided silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(00)00776-2
http://cds.cern.ch/record/684087
work_keys_str_mv AT krambergerg signalsinnonirradiatedandirradiatedsinglesidedsilicondetectors
AT cindrov signalsinnonirradiatedandirradiatedsinglesidedsilicondetectors
AT mikuzm signalsinnonirradiatedandirradiatedsinglesidedsilicondetectors

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