Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

Silicon diodes fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities (1, 2 and 15 kOhm cm) were irradiated with neutrons, pions and protons to fluences up to 2.4x10**14 n/cm2 1 MeV neutron NIEL equivalent. Effective trapping times for electrons and holes were determined by the charge correction method in the temperature range between -50 C and 20 C. The measured effective trapping probabilities scale linearly with fluence and decrease with increasing temperature. Irradiation with charged hadrons resulted in about 30 \% higher trapping probabilities than with neutrons at the same equivalent fluence. No dependence on silicon resistivity and oxygen concentration was found. The temperature dependence could be parameterized by a power-law scaling. Accelerated annealing at 60 C showed a 30 \% increase of hole trapping, measured at 10 C, and a decrease by about the same amount for electron trapping, both at a time scale of 10 hours.