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Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions
Silicon diodes fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities (1, 2 and 15 kOhm cm) were irradiated with neutrons, pions and protons to fluences up to 2.4x10**14 n/cm2 1 MeV neutron NIEL equivalent. Effective trapping times for electrons and holes were d...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/684161 |