Evaluation of Strip Detectors on Oxygenated Silicon for the ATLAS-SCT Forward Region

Recent results of the RD48 (ROSE) collaboration suggest the usage of oxygen enriched silicon for sensors operated in the harsh radiation environment of future high luminosity experiments. To investigate if the antcipated beneficial properties are still present after full processing of the wafers, strip detectors for the innermost ring of the ATLAS forward region have been fabricated by CiS, Germany, on oxygen enriched silicon. These sensors, together with sensors on standard and thin substrates, have been exposed to $3\cdot10^{14}\,\mathrm{24~GeV~protons/cm^{2}}$ at the CERN PS. We are presenting here the comparison between the sensors based on the CV measurements and the investigation of the charge collection efficiency obtained with a $\rm ^{90}Sr$ source and the anlogue readout chip SCT128A.