Electrical Characteristics of Silicon Pixel Sensors

Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from pro...

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Detalles Bibliográficos
Autores principales: Gorelov, I, Gorfine, G, Hoeferkamp, M, Mata-Bruni, V, Santistevan, G, Seidel, S C, Ciocio, A, Einsweiler, K F, Emes, J, Gilchriese, M G D, Joshi, A, Kleinfelder, S A, Marchesini, R, McCormack, F, Milgrome, O, Palaio, N, Pengg, F, Richardson, J, Zizka, G, Ackers, M, Comes, G, Fischer, P, Keil, M, Klasen, V, Kühl, T, Meuser, S, Ockenfels, W, Raith, B, Treis, J, Wermes, N, Gössling, C, Hügging, F G, Klaiber Lodewigs, Jonas M, Krasel, O, Wüstenfeld, J, Wunstorf, R, Barberis, D, Beccherle, R, Caso, Carlo, Cervetto, M, Darbo, G, Gagliardi, G, Gemme, C, Morettini, P, Netchaeva, P, Osculati, B, Rossi, L, Charles, E, Fasching, D, Blanquart, L, Breugnon, P, Calvet, D, Clemens, J-C, Delpierre, P A, Hallewell, G D, Laugier, D, Mouthuy, T, Rozanov, A, Valin, I, Andreazza, A, Caccia, M, Citterio, M, Lari, T, Meroni, C, Ragusa, F, Troncon, C, Vegni, G, Lutz, Gerhard, Richter, R H, Rohe, T, Boyd, GR, Skubic, P L, Sícho, P, Tomasek, L, Vrba, V, Holder, M, Ziolkowski, M, Cauz, D, Cobal-Grassmann, M, D'Auria, S, De Lotto, B, del Papa, C, Grassmann, H, Santi, L, Becks, K H, Lenzen, G, Linder, C
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/684262
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author Gorelov, I
Gorfine, G
Hoeferkamp, M
Mata-Bruni, V
Santistevan, G
Seidel, S C
Ciocio, A
Einsweiler, K F
Emes, J
Gilchriese, M G D
Joshi, A
Kleinfelder, S A
Marchesini, R
McCormack, F
Milgrome, O
Palaio, N
Pengg, F
Richardson, J
Zizka, G
Ackers, M
Comes, G
Fischer, P
Keil, M
Klasen, V
Kühl, T
Meuser, S
Ockenfels, W
Raith, B
Treis, J
Wermes, N
Gössling, C
Hügging, F G
Klaiber Lodewigs, Jonas M
Krasel, O
Wüstenfeld, J
Wunstorf, R
Barberis, D
Beccherle, R
Caso, Carlo
Cervetto, M
Darbo, G
Gagliardi, G
Gemme, C
Morettini, P
Netchaeva, P
Osculati, B
Rossi, L
Charles, E
Fasching, D
Blanquart, L
Breugnon, P
Calvet, D
Clemens, J-C
Delpierre, P A
Hallewell, G D
Laugier, D
Mouthuy, T
Rozanov, A
Valin, I
Andreazza, A
Caccia, M
Citterio, M
Lari, T
Meroni, C
Ragusa, F
Troncon, C
Vegni, G
Lutz, Gerhard
Richter, R H
Rohe, T
Boyd, GR
Skubic, P L
Sícho, P
Tomasek, L
Vrba, V
Holder, M
Ziolkowski, M
Cauz, D
Cobal-Grassmann, M
D'Auria, S
De Lotto, B
del Papa, C
Grassmann, H
Santi, L
Becks, K H
Lenzen, G
Linder, C
author_facet Gorelov, I
Gorfine, G
Hoeferkamp, M
Mata-Bruni, V
Santistevan, G
Seidel, S C
Ciocio, A
Einsweiler, K F
Emes, J
Gilchriese, M G D
Joshi, A
Kleinfelder, S A
Marchesini, R
McCormack, F
Milgrome, O
Palaio, N
Pengg, F
Richardson, J
Zizka, G
Ackers, M
Comes, G
Fischer, P
Keil, M
Klasen, V
Kühl, T
Meuser, S
Ockenfels, W
Raith, B
Treis, J
Wermes, N
Gössling, C
Hügging, F G
Klaiber Lodewigs, Jonas M
Krasel, O
Wüstenfeld, J
Wunstorf, R
Barberis, D
Beccherle, R
Caso, Carlo
Cervetto, M
Darbo, G
Gagliardi, G
Gemme, C
Morettini, P
Netchaeva, P
Osculati, B
Rossi, L
Charles, E
Fasching, D
Blanquart, L
Breugnon, P
Calvet, D
Clemens, J-C
Delpierre, P A
Hallewell, G D
Laugier, D
Mouthuy, T
Rozanov, A
Valin, I
Andreazza, A
Caccia, M
Citterio, M
Lari, T
Meroni, C
Ragusa, F
Troncon, C
Vegni, G
Lutz, Gerhard
Richter, R H
Rohe, T
Boyd, GR
Skubic, P L
Sícho, P
Tomasek, L
Vrba, V
Holder, M
Ziolkowski, M
Cauz, D
Cobal-Grassmann, M
D'Auria, S
De Lotto, B
del Papa, C
Grassmann, H
Santi, L
Becks, K H
Lenzen, G
Linder, C
author_sort Gorelov, I
collection CERN
description Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
id cern-684262
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
record_format invenio
spelling cern-6842622019-09-30T06:29:59Zhttp://cds.cern.ch/record/684262engGorelov, IGorfine, GHoeferkamp, MMata-Bruni, VSantistevan, GSeidel, S CCiocio, AEinsweiler, K FEmes, JGilchriese, M G DJoshi, AKleinfelder, S AMarchesini, RMcCormack, FMilgrome, OPalaio, NPengg, FRichardson, JZizka, GAckers, MComes, GFischer, PKeil, MKlasen, VKühl, TMeuser, SOckenfels, WRaith, BTreis, JWermes, NGössling, CHügging, F GKlaiber Lodewigs, Jonas MKrasel, OWüstenfeld, JWunstorf, RBarberis, DBeccherle, RCaso, CarloCervetto, MDarbo, GGagliardi, GGemme, CMorettini, PNetchaeva, POsculati, BRossi, LCharles, EFasching, DBlanquart, LBreugnon, PCalvet, DClemens, J-CDelpierre, P AHallewell, G DLaugier, DMouthuy, TRozanov, AValin, IAndreazza, ACaccia, MCitterio, MLari, TMeroni, CRagusa, FTroncon, CVegni, GLutz, GerhardRichter, R HRohe, TBoyd, GRSkubic, P LSícho, PTomasek, LVrba, VHolder, MZiolkowski, MCauz, DCobal-Grassmann, MD'Auria, SDe Lotto, Bdel Papa, CGrassmann, HSanti, LBecks, K HLenzen, GLinder, CElectrical Characteristics of Silicon Pixel SensorsDetectors and Experimental TechniquesPrototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.ATL-INDET-2001-011oai:cds.cern.ch:6842622001-10-29
spellingShingle Detectors and Experimental Techniques
Gorelov, I
Gorfine, G
Hoeferkamp, M
Mata-Bruni, V
Santistevan, G
Seidel, S C
Ciocio, A
Einsweiler, K F
Emes, J
Gilchriese, M G D
Joshi, A
Kleinfelder, S A
Marchesini, R
McCormack, F
Milgrome, O
Palaio, N
Pengg, F
Richardson, J
Zizka, G
Ackers, M
Comes, G
Fischer, P
Keil, M
Klasen, V
Kühl, T
Meuser, S
Ockenfels, W
Raith, B
Treis, J
Wermes, N
Gössling, C
Hügging, F G
Klaiber Lodewigs, Jonas M
Krasel, O
Wüstenfeld, J
Wunstorf, R
Barberis, D
Beccherle, R
Caso, Carlo
Cervetto, M
Darbo, G
Gagliardi, G
Gemme, C
Morettini, P
Netchaeva, P
Osculati, B
Rossi, L
Charles, E
Fasching, D
Blanquart, L
Breugnon, P
Calvet, D
Clemens, J-C
Delpierre, P A
Hallewell, G D
Laugier, D
Mouthuy, T
Rozanov, A
Valin, I
Andreazza, A
Caccia, M
Citterio, M
Lari, T
Meroni, C
Ragusa, F
Troncon, C
Vegni, G
Lutz, Gerhard
Richter, R H
Rohe, T
Boyd, GR
Skubic, P L
Sícho, P
Tomasek, L
Vrba, V
Holder, M
Ziolkowski, M
Cauz, D
Cobal-Grassmann, M
D'Auria, S
De Lotto, B
del Papa, C
Grassmann, H
Santi, L
Becks, K H
Lenzen, G
Linder, C
Electrical Characteristics of Silicon Pixel Sensors
title Electrical Characteristics of Silicon Pixel Sensors
title_full Electrical Characteristics of Silicon Pixel Sensors
title_fullStr Electrical Characteristics of Silicon Pixel Sensors
title_full_unstemmed Electrical Characteristics of Silicon Pixel Sensors
title_short Electrical Characteristics of Silicon Pixel Sensors
title_sort electrical characteristics of silicon pixel sensors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/684262
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