The R-Phi silicon vertex detector simulation as implemented in SICB

This note describes the current implementation of the silicon vertex detector simulation. The description includes the salient details of the silicon wafer geometry and the corresponding support material as well as the digitisation schemes employed. The note also explains the structure of the banks and errors on the cluster positions which are available to the user and, finally, lists a few items which have not been implemented at the time of this version (SICB v111), but which will be added to the simulation in future releases. This document is intended as a source of input for the corresponding section of the LHCB technical proposal.1