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Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures

99-026 This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5 x 10^14 p/cm2 and operated at cryogenic temperatures. An empirical model is...

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Autores principales: Bartalini, P, Bowcock, T J V, Buytaert, J, Chabaud, V, Collins, P, Dijkstra, H, Dormond, O, Frei, R, Parkes, C, Ruf, T, Saladino, S
Lenguaje:eng
Publicado: 1999
Materias:
Acceso en línea:http://cds.cern.ch/record/684722
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author Bartalini, P
Bowcock, T J V
Buytaert, J
Chabaud, V
Collins, P
Dijkstra, H
Dormond, O
Frei, R
Parkes, C
Ruf, T
Saladino, S
author_facet Bartalini, P
Bowcock, T J V
Buytaert, J
Chabaud, V
Collins, P
Dijkstra, H
Dormond, O
Frei, R
Parkes, C
Ruf, T
Saladino, S
author_sort Bartalini, P
collection CERN
description 99-026 This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5 x 10^14 p/cm2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency.The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100 % at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the ``Lazarus effect'', can be related to similar recent observations on diode behaviour.
id cern-684722
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-6847222019-09-30T06:29:59Zhttp://cds.cern.ch/record/684722engBartalini, PBowcock, T J VBuytaert, JChabaud, VCollins, PDijkstra, HDormond, OFrei, RParkes, CRuf, TSaladino, SCharge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperaturesDetectors and Experimental Techniques99-026 This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5 x 10^14 p/cm2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency.The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100 % at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the ``Lazarus effect'', can be related to similar recent observations on diode behaviour.LHCb-99-026oai:cds.cern.ch:6847221999-07-14
spellingShingle Detectors and Experimental Techniques
Bartalini, P
Bowcock, T J V
Buytaert, J
Chabaud, V
Collins, P
Dijkstra, H
Dormond, O
Frei, R
Parkes, C
Ruf, T
Saladino, S
Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
title Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
title_full Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
title_fullStr Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
title_full_unstemmed Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
title_short Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
title_sort charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/684722
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