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A study of charge trapping in irradiated silicon with test beam data
This note describes an original method which has been developed to determine the trapping time constants in irradiated silicon using the data of the ATLAS Pixel Detector test beams. The charge collection efficiency is measured as a function of the drift length in irradiated silicon, and the charge c...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/685542 |