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Charge Collection Efficiency in Heavily Irradiated Silicon Diodes

Detalles Bibliográficos
Autores principales: Beattie, L, Brodbeck, TJ, Chilingarov, A G, Hughes, G, Ratoff, P N, Sloan, T
Lenguaje:eng
Publicado: 1997
Materias:
Acceso en línea:http://cds.cern.ch/record/686025
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author Beattie, L
Brodbeck, TJ
Chilingarov, A G
Hughes, G
Ratoff, P N
Sloan, T
author_facet Beattie, L
Brodbeck, TJ
Chilingarov, A G
Hughes, G
Ratoff, P N
Sloan, T
author_sort Beattie, L
collection CERN
id cern-686025
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1997
record_format invenio
spelling cern-6860252019-09-30T06:29:59Zhttp://cds.cern.ch/record/686025engBeattie, LBrodbeck, TJChilingarov, A GHughes, GRatoff, P NSloan, TCharge Collection Efficiency in Heavily Irradiated Silicon DiodesDetectors and Experimental TechniquesATL-INDET-97-171ATL-I-PN-171oai:cds.cern.ch:6860251997-06-16
spellingShingle Detectors and Experimental Techniques
Beattie, L
Brodbeck, TJ
Chilingarov, A G
Hughes, G
Ratoff, P N
Sloan, T
Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
title Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
title_full Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
title_fullStr Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
title_full_unstemmed Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
title_short Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
title_sort charge collection efficiency in heavily irradiated silicon diodes
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/686025
work_keys_str_mv AT beattiel chargecollectionefficiencyinheavilyirradiatedsilicondiodes
AT brodbecktj chargecollectionefficiencyinheavilyirradiatedsilicondiodes
AT chilingarovag chargecollectionefficiencyinheavilyirradiatedsilicondiodes
AT hughesg chargecollectionefficiencyinheavilyirradiatedsilicondiodes
AT ratoffpn chargecollectionefficiencyinheavilyirradiatedsilicondiodes
AT sloant chargecollectionefficiencyinheavilyirradiatedsilicondiodes