Cargando…
Operation of Heavily Irradiated Silicon Detectors Under Forward Bias
Autores principales: | Chilingarov, A G, Sloan, T |
---|---|
Lenguaje: | eng |
Publicado: |
1997
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/686030 |
Ejemplares similares
-
Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
por: Mandić, I, et al.
Publicado: (2004) -
Charge Collection Efficiency in Heavily Irradiated Silicon Diodes
por: Beattie, L, et al.
Publicado: (1997) -
High Voltage Operation of heavily irradiated silicon microstrip detectors
por: Gu, W H, et al.
Publicado: (1999) -
Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
por: Casagrande, L, et al.
Publicado: (1998) -
Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
por: Casagrande, L, et al.
Publicado: (1999)