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Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor

Detalles Bibliográficos
Autor principal: Matthews, J A J
Lenguaje:eng
Publicado: 1997
Materias:
Acceso en línea:http://cds.cern.ch/record/686032
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author Matthews, J A J
author_facet Matthews, J A J
author_sort Matthews, J A J
collection CERN
id cern-686032
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1997
record_format invenio
spelling cern-6860322019-09-30T06:29:59Zhttp://cds.cern.ch/record/686032engMatthews, J A JLong Term 0degreeC Annealing of a Highly Irradiated Silicon SensorDetectors and Experimental TechniquesATL-INDET-97-178ATL-I-PN-178oai:cds.cern.ch:6860321997-07-22
spellingShingle Detectors and Experimental Techniques
Matthews, J A J
Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor
title Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor
title_full Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor
title_fullStr Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor
title_full_unstemmed Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor
title_short Long Term 0degreeC Annealing of a Highly Irradiated Silicon Sensor
title_sort long term 0degreec annealing of a highly irradiated silicon sensor
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/686032
work_keys_str_mv AT matthewsjaj longterm0degreecannealingofahighlyirradiatedsiliconsensor