Pion Radiation Damage in InGaAs p-i-n Photodiodes

Fully packaged InGaAs p-i-n photodiodes for use in CMS Tracker optical digital timing and control links have been irradiated at room temperature with 330MeV positive pions. Measurements of the leakage current and photocurrent response were made in-situ for pion fluences up to 3.9x10 14pi+/cm2. The l...

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Detalles Bibliográficos
Autores principales: Gill, Karl, Arbet-Engels, Vincent, Cervelli, Giovanni, Grabit, Robert, Mommaert, Chantal, Stefanini, Giorgio, Troska, Jan, Vasey, François
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/686983

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