Pion Radiation Damage in InGaAs p-i-n Photodiodes

Fully packaged InGaAs p-i-n photodiodes for use in CMS Tracker optical digital timing and control links have been irradiated at room temperature with 330MeV positive pions. Measurements of the leakage current and photocurrent response were made in-situ for pion fluences up to 3.9x10 14pi+/cm2. The l...

Descrizione completa

Dettagli Bibliografici
Autori principali: Gill, Karl, Arbet-Engels, Vincent, Cervelli, Giovanni, Grabit, Robert, Mommaert, Chantal, Stefanini, Giorgio, Troska, Jan, Vasey, François
Lingua:eng
Pubblicazione: 1998
Soggetti:
Detectors and Experimental Techniques
Accesso online:http://cds.cern.ch/record/686983

Accesso online

http://cds.cern.ch/record/686983

Documenti analoghi