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Investigation of design parameters and choice of substrate resistivity and crystal orientation for the CMS silicon microstrip detector
The electrical characteristics ( interstrip and backplane capacitance, leakage current, depletion and breakdown voltage) of silicon microstrip detectors were measured for strip pitches between 60 um and 240 um and various strip implant and metal widths on multi-geometry devices. Both AC and DC coupl...
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| Lenguaje: | eng |
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2000
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| Acceso en línea: | http://cds.cern.ch/record/687211 |