Tests of CMS Silicon Detector Modules with a 350 MeV/c Hadron Beam

Different CMS silicon microstrip detectors equipped with the APV6, APV25S0 or APV25S1 readout chips have been exposed to a 350 MeV/c pion or proton beam at the Paul Scherrer Institute (PSI, Villigen, CH). We compare the performance of irradiated and non-irradiated silicon sensors as well as the APV6...

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Detalles Bibliográficos
Autores principales: Angarano, Matteo Maria, Bauer, Thomas, Biasini, Maurizio, Bilei, Gian Mario, Bisello, Dario, Cecchetti, S, Creanza, Donato, Dierlamm, Alexander, Dirkes, Guido, Fano, Livio, Friedl, Markus, Giorgi, Marco, Grigoriev, Eugene, Hartmann, Frank, Heier, Stefan, Hrubec, Josef, Kaminski, A, Krammer, Manfred, Marseguerra, Giorgio, Pantano, Devis, Pernicka, Manfred, Postolache, Vasile, Radicci, Valeria, Röderer, F, Servoli, Leonello, Stavitski, I, Zhukov, Valery
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687386

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