Silicon Strip Detectors for LHC: Comprehensive Process and Device Analysis

In this paper, the application of technology CAD methodologies to design and optimization of Silicon Microstrip Detectors is described. More specifically, extensive use of both process and device simulation has been made, in order to predict the performance of DC and AC-coupled detectors being fabricated at CSEM SA Neuchatel, Switzerland, in the framework of a CERN R&D collaboration. Such devices, intended to be part of the CMS-project Si-Tracker, have also been extensively tested at the INFN laboratories in Perugia, Italy. Satisfactory agreement between measured and simulated data has been found. This validates the proposed approch, which allows fo fast and inexpensive characterization of "virtual" devices.