High Voltage Performance of Silicon Detectors Irradiated under Bias

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The CMS Preshower detector contains 16 sq. m of silicon. The silicon sensors' design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and...

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Autores principales: Bloch, Philippe, Cheremuhin, A E, Ciasnohova, Andrea, Dauphin, G, Golutvin, Igor, Jading, Y, Peisert, Anna, Safieh, J, Sergueev, S, Zamiatin, Nikolai
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687581
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author Bloch, Philippe
Cheremuhin, A E
Ciasnohova, Andrea
Dauphin, G
Golutvin, Igor
Jading, Y
Peisert, Anna
Safieh, J
Sergueev, S
Zamiatin, Nikolai
author_facet Bloch, Philippe
Cheremuhin, A E
Ciasnohova, Andrea
Dauphin, G
Golutvin, Igor
Jading, Y
Peisert, Anna
Safieh, J
Sergueev, S
Zamiatin, Nikolai
author_sort Bloch, Philippe
collection CERN
description The CMS Preshower detector contains 16 sq. m of silicon. The silicon sensors' design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and at low temperature. Their electrical parameters and their response to alpha and beta particles were measured. The charge collection efficiency attains a plateau at around 300 V. The irradiation set-up and the results of the measurements are presented in this paper.
id cern-687581
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1998
record_format invenio
spelling cern-6875812019-09-30T06:29:59Zhttp://cds.cern.ch/record/687581engBloch, PhilippeCheremuhin, A ECiasnohova, AndreaDauphin, GGolutvin, IgorJading, YPeisert, AnnaSafieh, JSergueev, SZamiatin, NikolaiHigh Voltage Performance of Silicon Detectors Irradiated under BiasDetectors and Experimental TechniquesThe CMS Preshower detector contains 16 sq. m of silicon. The silicon sensors' design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and at low temperature. Their electrical parameters and their response to alpha and beta particles were measured. The charge collection efficiency attains a plateau at around 300 V. The irradiation set-up and the results of the measurements are presented in this paper.CMS-NOTE-1998-058oai:cds.cern.ch:6875811998-10-09
spellingShingle Detectors and Experimental Techniques
Bloch, Philippe
Cheremuhin, A E
Ciasnohova, Andrea
Dauphin, G
Golutvin, Igor
Jading, Y
Peisert, Anna
Safieh, J
Sergueev, S
Zamiatin, Nikolai
High Voltage Performance of Silicon Detectors Irradiated under Bias
title High Voltage Performance of Silicon Detectors Irradiated under Bias
title_full High Voltage Performance of Silicon Detectors Irradiated under Bias
title_fullStr High Voltage Performance of Silicon Detectors Irradiated under Bias
title_full_unstemmed High Voltage Performance of Silicon Detectors Irradiated under Bias
title_short High Voltage Performance of Silicon Detectors Irradiated under Bias
title_sort high voltage performance of silicon detectors irradiated under bias
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687581
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AT cheremuhinae highvoltageperformanceofsilicondetectorsirradiatedunderbias
AT ciasnohovaandrea highvoltageperformanceofsilicondetectorsirradiatedunderbias
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AT golutvinigor highvoltageperformanceofsilicondetectorsirradiatedunderbias
AT jadingy highvoltageperformanceofsilicondetectorsirradiatedunderbias
AT peisertanna highvoltageperformanceofsilicondetectorsirradiatedunderbias
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