Sensor Development for the CMS Pixel Detector

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This paper reports on a current R&D activity for the sensor part of the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence of 1E15 (1MeV Neutron)/cm**2 at the CERN PS. Afterwards they have been bump bonded to unirradiated reado...

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Detalles Bibliográficos
Autores principales: Rohe, T., Bortoletto, D., Chiochia, V., Cremaldi, L.M., Cucciarelli, S., Dorokhov, A., Konecki, M., Prokofiev, Kirill, Regenfus, Christian, Sanders, D.A., Son, S., Speer, T., Swartz, M.
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2004.829487
http://cds.cern.ch/record/688671
Descripción
Sumario:This paper reports on a current R&D activity for the sensor part of the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluence of 1E15 (1MeV Neutron)/cm**2 at the CERN PS. Afterwards they have been bump bonded to unirradiated readout chips. The chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The samples have been tested using high energy pions in the H2 beam line of the CERN SPS in June and September 2003. The results of this test beam are presented and the differences between the sensor options are discussed.

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