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A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4

Detalles Bibliográficos
Autores principales: Nouais, D, Cerello, P G
Lenguaje:eng
Publicado: 2001
Materias:
Acceso en línea:http://cds.cern.ch/record/689045
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author Nouais, D
Cerello, P G
author_facet Nouais, D
Cerello, P G
author_sort Nouais, D
collection CERN
id cern-689045
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
record_format invenio
spelling cern-6890452019-09-30T06:29:59Zhttp://cds.cern.ch/record/689045engNouais, DCerello, P GA detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4Detectors and Experimental TechniquesALICE-INT-2001-09CERN-ALICE-INT-2001-09oai:cds.cern.ch:6890452001
spellingShingle Detectors and Experimental Techniques
Nouais, D
Cerello, P G
A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4
title A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4
title_full A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4
title_fullStr A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4
title_full_unstemmed A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4
title_short A detailed study of charge diffusion and its effect on spatial resolution in Silicon Drift Detectors, pt.4
title_sort detailed study of charge diffusion and its effect on spatial resolution in silicon drift detectors, pt.4
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/689045
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AT nouaisd detailedstudyofchargediffusionanditseffectonspatialresolutioninsilicondriftdetectorspt4
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