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Microelectronics Radiation Hardness: Test Set-up for the ALICE Pixel Detector

Two different test apparatus were set up to check the radiation hardness of the pixel detector electronic components designed for the ALICE ITS. Motivations and the mainfeatures are described as well as results we reached. Preliminary results on the OMEGA3/LHC1 chip are also presented. <P> Lis...

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Detalles Bibliográficos
Autores principales: Meddi, F, Carrer, N, Morando, M, Scarlassara, F, Segato, G F, Soramel, F, Vannucci, Luigi, Di Liberto, S
Lenguaje:eng
Publicado: 2000
Materias:
Acceso en línea:http://cds.cern.ch/record/689073
Descripción
Sumario:Two different test apparatus were set up to check the radiation hardness of the pixel detector electronic components designed for the ALICE ITS. Motivations and the mainfeatures are described as well as results we reached. Preliminary results on the OMEGA3/LHC1 chip are also presented. <P> List of figures: <UL> <LI>Figure 1 <A HREF="pirad_report_fig1.eps">Expected irradiation dose in ten years for the first layer (r=3.9 cm) of the pixel detectors operating in ALICE</A> <LI>Figure 2 <A HREF="pirad_report_fig2.eps">a) Chip digital part current (at bias of +3.5V) and b) chip analogue part current (at bias of +1.5V) as function of the cumulated dose for gamma irradiation </A> <LI>Figure 3 <A HREF="pirad_report_fig3.eps">Pixel efficiency as a function of the strobe delay a) and the annealing elapsed time b) after gamma irradiation</A> <LI>Figure 4 <A HREF="pirad_report_fig4.eps">a) Chip digital part current (at bias of +3.5V) and b) chip analogue part current (at bias of +1.5V) as function of the cumulated dose for proton irradiation. Pixel efficiency, at different time intervals after proton irradiation, as a function of the strobe delay d) and the threshold scanning c)</A> </UL>