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Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system

Silicon strip sensors will be used as technology for the LHCb Inner Tracker. The signal-to-noise ratio (S/N) and the charge division among two neighbouring strips are important sensor parameters. In order to investigate the charge sharing between two adjacent strips, measurements with a 1083 nm lase...

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Detalles Bibliográficos
Autores principales: Bauer, C, Glebe, T, Pugatch, V, Schmelling, M, Schwingenheuer, B, Sievers, P
Lenguaje:eng
Publicado: 2001
Materias:
Acceso en línea:http://cds.cern.ch/record/691472
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author Bauer, C
Glebe, T
Pugatch, V
Schmelling, M
Schwingenheuer, B
Sievers, P
author_facet Bauer, C
Glebe, T
Pugatch, V
Schmelling, M
Schwingenheuer, B
Sievers, P
author_sort Bauer, C
collection CERN
description Silicon strip sensors will be used as technology for the LHCb Inner Tracker. The signal-to-noise ratio (S/N) and the charge division among two neighbouring strips are important sensor parameters. In order to investigate the charge sharing between two adjacent strips, measurements with a 1083 nm laser were performed. Minimum ionizing electrons from a ruthenium-source were used to study the S/N-performance of the silicon sensors. The S/N-measurements were also performed with sensors after irradiation with 24 GeV protons up to a fluence of 1.7*10^14 cm^-2, corresponding to more than 10 years of LHCb Inner Tracker operation in the most irradiated zones.
id cern-691472
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
record_format invenio
spelling cern-6914722019-09-30T06:29:59Zhttp://cds.cern.ch/record/691472engBauer, CGlebe, TPugatch, VSchmelling, MSchwingenheuer, BSievers, PCharacterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser systemDetectors and Experimental TechniquesSilicon strip sensors will be used as technology for the LHCb Inner Tracker. The signal-to-noise ratio (S/N) and the charge division among two neighbouring strips are important sensor parameters. In order to investigate the charge sharing between two adjacent strips, measurements with a 1083 nm laser were performed. Minimum ionizing electrons from a ruthenium-source were used to study the S/N-performance of the silicon sensors. The S/N-measurements were also performed with sensors after irradiation with 24 GeV protons up to a fluence of 1.7*10^14 cm^-2, corresponding to more than 10 years of LHCb Inner Tracker operation in the most irradiated zones.LHCb-2001-121oai:cds.cern.ch:6914722001-09-12
spellingShingle Detectors and Experimental Techniques
Bauer, C
Glebe, T
Pugatch, V
Schmelling, M
Schwingenheuer, B
Sievers, P
Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
title Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
title_full Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
title_fullStr Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
title_full_unstemmed Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
title_short Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
title_sort characterization of inner tracker silicon prototype sensors using a 106 ru-source and a 1083 nm laser system
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/691472
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