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Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system
Silicon strip sensors will be used as technology for the LHCb Inner Tracker. The signal-to-noise ratio (S/N) and the charge division among two neighbouring strips are important sensor parameters. In order to investigate the charge sharing between two adjacent strips, measurements with a 1083 nm lase...
Autores principales: | , , , , , |
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Lenguaje: | eng |
Publicado: |
2001
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/691472 |
_version_ | 1780901998110965760 |
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author | Bauer, C Glebe, T Pugatch, V Schmelling, M Schwingenheuer, B Sievers, P |
author_facet | Bauer, C Glebe, T Pugatch, V Schmelling, M Schwingenheuer, B Sievers, P |
author_sort | Bauer, C |
collection | CERN |
description | Silicon strip sensors will be used as technology for the LHCb Inner Tracker. The signal-to-noise ratio (S/N) and the charge division among two neighbouring strips are important sensor parameters. In order to investigate the charge sharing between two adjacent strips, measurements with a 1083 nm laser were performed. Minimum ionizing electrons from a ruthenium-source were used to study the S/N-performance of the silicon sensors. The S/N-measurements were also performed with sensors after irradiation with 24 GeV protons up to a fluence of 1.7*10^14 cm^-2, corresponding to more than 10 years of LHCb Inner Tracker operation in the most irradiated zones. |
id | cern-691472 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2001 |
record_format | invenio |
spelling | cern-6914722019-09-30T06:29:59Zhttp://cds.cern.ch/record/691472engBauer, CGlebe, TPugatch, VSchmelling, MSchwingenheuer, BSievers, PCharacterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser systemDetectors and Experimental TechniquesSilicon strip sensors will be used as technology for the LHCb Inner Tracker. The signal-to-noise ratio (S/N) and the charge division among two neighbouring strips are important sensor parameters. In order to investigate the charge sharing between two adjacent strips, measurements with a 1083 nm laser were performed. Minimum ionizing electrons from a ruthenium-source were used to study the S/N-performance of the silicon sensors. The S/N-measurements were also performed with sensors after irradiation with 24 GeV protons up to a fluence of 1.7*10^14 cm^-2, corresponding to more than 10 years of LHCb Inner Tracker operation in the most irradiated zones.LHCb-2001-121oai:cds.cern.ch:6914722001-09-12 |
spellingShingle | Detectors and Experimental Techniques Bauer, C Glebe, T Pugatch, V Schmelling, M Schwingenheuer, B Sievers, P Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system |
title | Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system |
title_full | Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system |
title_fullStr | Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system |
title_full_unstemmed | Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system |
title_short | Characterization of Inner Tracker silicon prototype sensors using a 106 Ru-source and a 1083 nm laser system |
title_sort | characterization of inner tracker silicon prototype sensors using a 106 ru-source and a 1083 nm laser system |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/691472 |
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