Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leak...

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Detalles Bibliográficos
Autores principales: Martínez, C, Rafí, J M, Lozano, M, Campabadal, F, Santander, J, Fonseca, L, Ullán, M, Moreno, A
Lenguaje:eng
Publicado: 2002
Materias:
Health Physics and Radiation Effects
Acceso en línea:http://cds.cern.ch/record/705958
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author Martínez, C
Rafí, J M
Lozano, M
Campabadal, F
Santander, J
Fonseca, L
Ullán, M
Moreno, A
author_facet Martínez, C
Rafí, J M
Lozano, M
Campabadal, F
Santander, J
Fonseca, L
Ullán, M
Moreno, A
author_sort Martínez, C
collection CERN
description This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).
id cern-705958
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-7059582019-09-30T06:29:59Zhttp://cds.cern.ch/record/705958engMartínez, CRafí, J MLozano, MCampabadal, FSantander, JFonseca, LUllán, MMoreno, ANovel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectorsHealth Physics and Radiation EffectsThis work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).oai:cds.cern.ch:7059582002
spellingShingle Health Physics and Radiation Effects
Martínez, C
Rafí, J M
Lozano, M
Campabadal, F
Santander, J
Fonseca, L
Ullán, M
Moreno, A
Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
title Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
title_full Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
title_fullStr Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
title_full_unstemmed Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
title_short Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
title_sort novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
topic Health Physics and Radiation Effects
url http://cds.cern.ch/record/705958
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