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Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leak...

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Detalles Bibliográficos
Autores principales:	Martínez, C, Rafí, J M, Lozano, M, Campabadal, F, Santander, J, Fonseca, L, Ullán, M, Moreno, A
Lenguaje:	eng
Publicado:	2002
Materias:	Health Physics and Radiation Effects
Acceso en línea:	http://cds.cern.ch/record/705958

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