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Radiation tolerance of oxygenated n-strip read-out detectors

Following earlier work on 'oxygenated' detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomoge...

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Detalles Bibliográficos
Autores principales: Allport, P P, Casse, G, Greenall, A
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.08.007
http://cds.cern.ch/record/725864
Descripción
Sumario:Following earlier work on 'oxygenated' detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomogeneously irradiated up to doses of 7 multiplied by 10**1**4p/cm**2 using 24 GeV protons from the CERN PS. Results are presented on the charge collection efficiencies as a function of operating voltage for regions of the detectors irradiated to different doses, using LHC speed analogue read-out electronics. The measurements confirm the expectations which led to our original proposal of such detectors which are now being envisaged for the silicon-based detector systems at the LHC designed to withstand the greatest doses. The possibilities for survival at an upgraded luminosity LHC (Super-LHC) are also briefly discussed.