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Radiation tolerance of oxygenated n-strip read-out detectors
Following earlier work on 'oxygenated' detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomoge...
Autores principales: | , , |
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Lenguaje: | eng |
Publicado: |
2003
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.08.007 http://cds.cern.ch/record/725864 |
Sumario: | Following earlier work on 'oxygenated' detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomogeneously irradiated up to doses of 7 multiplied by 10**1**4p/cm**2 using 24 GeV protons from the CERN PS. Results are presented on the charge collection efficiencies as a function of operating voltage for regions of the detectors irradiated to different doses, using LHC speed analogue read-out electronics. The measurements confirm the expectations which led to our original proposal of such detectors which are now being envisaged for the silicon-based detector systems at the LHC designed to withstand the greatest doses. The possibilities for survival at an upgraded luminosity LHC (Super-LHC) are also briefly discussed. |
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