A 0.13$\mu$m CMOS technology: Its radiation hardness and its application in high energy physics experiments

Radiation hardness is a major concern for electronics in high luminosity colliders for high energy physics (HEP). For several years, the HEP community has studied and evaluated radiation hard technologies suitable for the development of analog, digital, and mixed signal application specific integrated circuits. The European Organization for Nuclear Research (CERN) uses currently extensively a commercial 0.25μm complementary metal oxide semiconductor (CMOS) technology for the custom-developed integrated circuits for instrumentation in the Large Hadron Collider. This technology has been carefully evaluated in the past and several measures have been taken to assert the radiation hardness of its applications. To explore the benefits of more advanced technologies, to stay in line with technology progress and in order to prepare for a phase out of this quarter micron technology, a 0.13μm CMOS technology has been analyzed. This thesis outlines, after a theoretical introduction into the fields of radiation effects on metal oxide semiconductor field effect transistors, an overview on results of an experimental study with this 0.13μm complementary metal oxide semiconductor technology. Total ionizing dose and single event effect characteristics as well as three selected integrated circuits and their measurement results are presented. Indications and recommendations for the use of this technology for high energy physics applications are given.