Cargando…

Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the ob...

Descripción completa

Detalles Bibliográficos
Autor principal:	Ruggiero, G
Lenguaje:	eng
Publicado:	Glasgow U. 2003
Materias:	Condensed Matter
Acceso en línea:	http://cds.cern.ch/record/744874

Ejemplares similares

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon
por: Makarenko, Leonid F, et al.
Publicado: (2019)

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons
por: Holmkvist, William
Publicado: (2014)

Evidence for vacancy percolation in highly-doped silicon
por: Müller, E, et al.
Publicado: (1995)

Defect generation by radioactive decay of light elements in n-type silicon
por: Bollmann, J, et al.
Publicado: (2006)

Estimation of irradiation temperature within the irradiation program Rheinsberg
por: Stephan, I, et al.
Publicado: (2003)

Switching processes in TGS crystals irradiated by high-current electron beam
por: Efimov, V V, et al.
Publicado: (2002)

Evolution of the surface structures of solids under irradiation with high energy heavy ions
por: Didyk, A Y, et al.
Publicado: (2002)

The electronic configuration of substitutional Fe in silicon
por: Weyer, G, et al.
Publicado: (1999)

Imperfections and impurities in semiconductor silicon
por: Ravi, K V
Publicado: (1981)

The influence of oxygen on the lattice sites of rare earths in silicon
por: Wahl, U, et al.
Publicado: (2003)

Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments
por: Silva, Daniel, et al.
Publicado: (2015)

Performance of irradiated silicon microstrip detectors
por: Catacchini, E, et al.
Publicado: (1999)

Detection of substitutional and interstitial Fe in silicon by Mossbauer spectrocopy
por: Gunnlaugsson, H P, et al.
Publicado: (2002)

Lattice location of impurities in silicon Carbide
por: Granadeiro Costa, Angelo Rafael
Publicado: (2018)

Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods
por: Wieteska, K, et al.
Publicado: (1996)

Low-energy ion irradiation of solid surfaces
por: Gnaser, H
Publicado: (1999)

Annealing Study of Irradiated ATLAS Prototype Silicon Microstrip Detectors.
por: Morgan, D, et al.
Publicado: (1998)

PAC investigation of$^{77}$Br $\rightarrow ^{77}$Se on silicon surfaces
por: Lohmüller, J, et al.
Publicado: (1995)

Direct observation of the lattice sites of implanted manganese in silicon
por: da Silva, Daniel José, et al.
Publicado: (2015)

Iridium-related deep levels in n-type silicon
por: Bollmann, J, et al.
Publicado: (2000)

Forward emission of positronium from nanochanneled silicon membranes
por: Mariazzi, S, et al.
Publicado: (2022)

Conductometric determination of single pores in polyethyleneterephthalate irradiated by heavy ions
por: Oganesyan, V R, et al.
Publicado: (2002)

Lattice location of transition metals in silicon by means of emission channeling
por: da Silva, Daniel José
Publicado: (2015)

Numerical values of interference bremsstrahlung from copper and silicon crystals
por: Überall, Herbert
Publicado: (1958)

Optical properties of silicon carbide polytypes below and around bandgap
por: Kildemo, M
Publicado: (2004)

Deep level anomalies in silicon doped with radioactive Au atoms
por: Bollmann, J, et al.
Publicado: (1999)

Electron emission channeling with position-sensitive detectors
por: Wahl, U, et al.
Publicado: (2003)

Mössbauer spectroscopy of Fe in silicon with the novel laser-ionized $^{57}$Mn$^{+}$ ion beam at ISOLDE
por: Weyer, G, et al.
Publicado: (1997)

Influence of ion charge on primary defects creation in crystals irradiated by ions
por: Altynov, V A, et al.
Publicado: (2002)

Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
por: Weyer, G, et al.
Publicado: (1980)

Sensitivity study on Dark Matter inspired pMSSM SUSY scenarios with the ATLAS experiment using soft-leptons, b-jets and missing transverse momentum in the final state
por: Knippen, G
Publicado: (2013)

Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
por: Correia, J G, et al.
Publicado: (1996)

International Workshop on High Magnetic Fields : Industry, Materials and Technology : Applications, Generation, Materials
por: Schneider-Muntau, H J
Publicado: (1997)

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
por: Silva, Daniel José, et al.
Publicado: (2013)

Fall 1997 Meeting of the Materials Research Society: Symposium on Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials
Publicado: (1997)

High Voltage Operation of heavily irradiated silicon microstrip detectors
por: Gu, W H, et al.
Publicado: (1999)

Characterization of neutron irradiated silicon microstrip detectors
por: Lenzi, M, et al.
Publicado: (1999)

Second-generation HTS conductors
por: Goyal, Amit
Publicado: (2010)

Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System
por: Gentile, C A, et al.
Publicado: (2002)

Searching for supersymmetry in the first LHC data with ATLAS
por: Koetsveld, Folkert
Publicado: (2013)

Cannot write session to /tmp/vufind_sessions/sess_shsvqov0abnt1g693bv69garqs