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Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors

During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The perfor...

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Detalles Bibliográficos
Autores principales: Zhong He, Knoll, G, Whe, D
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:http://cds.cern.ch/record/747525
Descripción
Sumario:During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The performance of both gamma-ray spectrometers were individually tested. The angular resolution and detection sensitivity of the imaging system were measured using both a point and a line-shaped 137 Cs radiation source. The measurement results are consistent with that obtained from Monte-Carlo simulations performed during the early phase of the project.