Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors

During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The perfor...

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Detalles Bibliográficos
Autores principales: Zhong He, Knoll, G, Whe, D
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/747525
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author Zhong He
Knoll, G
Whe, D
author_facet Zhong He
Knoll, G
Whe, D
author_sort Zhong He
collection CERN
description During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The performance of both gamma-ray spectrometers were individually tested. The angular resolution and detection sensitivity of the imaging system were measured using both a point and a line-shaped 137 Cs radiation source. The measurement results are consistent with that obtained from Monte-Carlo simulations performed during the early phase of the project.
id cern-747525
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
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spelling cern-7475252019-09-30T06:29:59Zhttp://cds.cern.ch/record/747525engZhong HeKnoll, GWhe, DDevelopment of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor DetectorsDetectors and Experimental TechniquesDuring the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The performance of both gamma-ray spectrometers were individually tested. The angular resolution and detection sensitivity of the imaging system were measured using both a point and a line-shaped 137 Cs radiation source. The measurement results are consistent with that obtained from Monte-Carlo simulations performed during the early phase of the project.oai:cds.cern.ch:7475252003-05-14
spellingShingle Detectors and Experimental Techniques
Zhong He
Knoll, G
Whe, D
Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
title Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
title_full Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
title_fullStr Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
title_full_unstemmed Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
title_short Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
title_sort development of gamma-ray compton imager using room-temperature 3-d position sensitive semiconductor detectors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/747525
work_keys_str_mv AT zhonghe developmentofgammaraycomptonimagerusingroomtemperature3dpositionsensitivesemiconductordetectors
AT knollg developmentofgammaraycomptonimagerusingroomtemperature3dpositionsensitivesemiconductordetectors
AT whed developmentofgammaraycomptonimagerusingroomtemperature3dpositionsensitivesemiconductordetectors

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