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A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons
This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface se...
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| Lenguaje: | eng |
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1999
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| Acceso en línea: | http://cds.cern.ch/record/747659 |