Simulation of thermal properties of the silicon detector modules in ATLAS

The temperature distribution and power flow from cell on the Silicon Module of the Forward Semiconductor Tracker in the ATLAS experiment have been simulated for irradiated detector. Power generated by conduction was compared for the modules with one and two cooling points. To obtain an optimal cooli...

Descripción completa

Detalles Bibliográficos
Autores principales: Duerdoth, I P, Fasylov, M, Yuldashev, B S
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/774032
_version_ 1780904299976458240
author Duerdoth, I P
Fasylov, M
Yuldashev, B S
author_facet Duerdoth, I P
Fasylov, M
Yuldashev, B S
author_sort Duerdoth, I P
collection CERN
description The temperature distribution and power flow from cell on the Silicon Module of the Forward Semiconductor Tracker in the ATLAS experiment have been simulated for irradiated detector. Power generated by conduction was compared for the modules with one and two cooling points. To obtain an optimal cooling temperature, the temperature of the hottest cell was plotted against power on the silicon module. The analysis of the approximation function and values for the critical power for each cooling temperature are presented. The optimal value of the cooling temperature occurred to be 260 K. (author)
id cern-774032
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-7740322019-09-30T06:29:59Zhttp://cds.cern.ch/record/774032engDuerdoth, I PFasylov, MYuldashev, B SSimulation of thermal properties of the silicon detector modules in ATLASDetectors and Experimental TechniquesThe temperature distribution and power flow from cell on the Silicon Module of the Forward Semiconductor Tracker in the ATLAS experiment have been simulated for irradiated detector. Power generated by conduction was compared for the modules with one and two cooling points. To obtain an optimal cooling temperature, the temperature of the hottest cell was plotted against power on the silicon module. The analysis of the approximation function and values for the critical power for each cooling temperature are presented. The optimal value of the cooling temperature occurred to be 260 K. (author)oai:cds.cern.ch:7740322002
spellingShingle Detectors and Experimental Techniques
Duerdoth, I P
Fasylov, M
Yuldashev, B S
Simulation of thermal properties of the silicon detector modules in ATLAS
title Simulation of thermal properties of the silicon detector modules in ATLAS
title_full Simulation of thermal properties of the silicon detector modules in ATLAS
title_fullStr Simulation of thermal properties of the silicon detector modules in ATLAS
title_full_unstemmed Simulation of thermal properties of the silicon detector modules in ATLAS
title_short Simulation of thermal properties of the silicon detector modules in ATLAS
title_sort simulation of thermal properties of the silicon detector modules in atlas
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/774032
work_keys_str_mv AT duerdothip simulationofthermalpropertiesofthesilicondetectormodulesinatlas
AT fasylovm simulationofthermalpropertiesofthesilicondetectormodulesinatlas
AT yuldashevbs simulationofthermalpropertiesofthesilicondetectormodulesinatlas

Ejemplares similares