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A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC
A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could...
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.024 http://cds.cern.ch/record/802336 |
| _version_ | 1780904767415910400 |
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| author | Anelli, G Commichau, S C Despeisse, M Dissertori, G Jarron, P Miazza, C Moraes, D Shah, A Viertel, Gert M Wyrsch, N |
| author_facet | Anelli, G Commichau, S C Despeisse, M Dissertori, G Jarron, P Miazza, C Moraes, D Shah, A Viertel, Gert M Wyrsch, N |
| author_sort | Anelli, G |
| collection | CERN |
| description | A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n- i-p a-Si:H diode array deposited on a glass substrate and on the a- Si:H above ASIC prototype detector. |
| id | cern-802336 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2004 |
| record_format | invenio |
| spelling | cern-8023362019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.024http://cds.cern.ch/record/802336engAnelli, GCommichau, S CDespeisse, MDissertori, GJarron, PMiazza, CMoraes, DShah, AViertel, Gert MWyrsch, NA new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASICDetectors and Experimental TechniquesA new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n- i-p a-Si:H diode array deposited on a glass substrate and on the a- Si:H above ASIC prototype detector.oai:cds.cern.ch:8023362004 |
| spellingShingle | Detectors and Experimental Techniques Anelli, G Commichau, S C Despeisse, M Dissertori, G Jarron, P Miazza, C Moraes, D Shah, A Viertel, Gert M Wyrsch, N A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC |
| title | A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC |
| title_full | A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC |
| title_fullStr | A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC |
| title_full_unstemmed | A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC |
| title_short | A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC |
| title_sort | new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on asic |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/j.nima.2003.11.024 http://cds.cern.ch/record/802336 |
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