A new concept of monolithic silicon pixel detectors: Hydrogenated amorphous silicon on ASIC

A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could...

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Detalles Bibliográficos
Autores principales: Anelli, G, Commichau, S C, Despeisse, M, Dissertori, G, Jarron, P, Miazza, C, Moraes, D, Shah, A, Viertel, Gert M, Wyrsch, N
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.11.024
http://cds.cern.ch/record/802336

Internet

https://dx.doi.org/10.1016/j.nima.2003.11.024
http://cds.cern.ch/record/802336

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