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Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application
We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed o...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2004
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.022 http://cds.cern.ch/record/802347 |
| _version_ | 1780904769803517952 |
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| author | Despeisse, M Anelli, G Commichau, S C Dissertori, G Garrigos, A Jarron, P Miazza, C Moraes, D Shah, A Wyrsch, N Viertel, Gert M |
| author_facet | Despeisse, M Anelli, G Commichau, S C Dissertori, G Garrigos, A Jarron, P Miazza, C Moraes, D Shah, A Wyrsch, N Viertel, Gert M |
| author_sort | Despeisse, M |
| collection | CERN |
| description | We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed. |
| id | cern-802347 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2004 |
| record_format | invenio |
| spelling | cern-8023472019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.022http://cds.cern.ch/record/802347engDespeisse, MAnelli, GCommichau, S CDissertori, GGarrigos, AJarron, PMiazza, CMoraes, DShah, AWyrsch, NViertel, Gert MCharacterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection applicationDetectors and Experimental TechniquesWe present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.oai:cds.cern.ch:8023472004 |
| spellingShingle | Detectors and Experimental Techniques Despeisse, M Anelli, G Commichau, S C Dissertori, G Garrigos, A Jarron, P Miazza, C Moraes, D Shah, A Wyrsch, N Viertel, Gert M Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application |
| title | Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application |
| title_full | Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application |
| title_fullStr | Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application |
| title_full_unstemmed | Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application |
| title_short | Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application |
| title_sort | characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over cmos integrated circuits for particle detection application |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/j.nima.2003.11.022 http://cds.cern.ch/record/802347 |
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