Beam-loss-induced electrical stress test on CMS Silicon Strip Modules

Based on simulated LHC beam loss scenarios, fully depleted CMS silicon tracker modules and sensors were exposed to 42 ns-long beam spills of approximately 10**1**1 protons per spill at the PS at CERN. The ionisation dose was sufficient to short circuit the silicon sensors. The dynamic behaviour of b...

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Detalles Bibliográficos
Autores principales: Fahrer, M, Dirkes, G, Hartmann, F, Heier, S, MacPherson, A, Muller, T H, Weiler, T h
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.11.011
http://cds.cern.ch/record/802350
Descripción
Sumario:Based on simulated LHC beam loss scenarios, fully depleted CMS silicon tracker modules and sensors were exposed to 42 ns-long beam spills of approximately 10**1**1 protons per spill at the PS at CERN. The ionisation dose was sufficient to short circuit the silicon sensors. The dynamic behaviour of bias voltage, leakage currents and voltages over coupling capacitors were monitored during the impact. Results of pre- and post-qualification as well as the dynamic behaviour are shown.

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