Beam-loss-induced electrical stress test on CMS Silicon Strip Modules

Based on simulated LHC beam loss scenarios, fully depleted CMS silicon tracker modules and sensors were exposed to 42 ns-long beam spills of approximately 10**1**1 protons per spill at the PS at CERN. The ionisation dose was sufficient to short circuit the silicon sensors. The dynamic behaviour of b...

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Detalles Bibliográficos
Autores principales: Fahrer, M, Dirkes, G, Hartmann, F, Heier, S, MacPherson, A, Muller, T H, Weiler, T h
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.11.011
http://cds.cern.ch/record/802350
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author Fahrer, M
Dirkes, G
Hartmann, F
Heier, S
MacPherson, A
Muller, T H
Weiler, T h
author_facet Fahrer, M
Dirkes, G
Hartmann, F
Heier, S
MacPherson, A
Muller, T H
Weiler, T h
author_sort Fahrer, M
collection CERN
description Based on simulated LHC beam loss scenarios, fully depleted CMS silicon tracker modules and sensors were exposed to 42 ns-long beam spills of approximately 10**1**1 protons per spill at the PS at CERN. The ionisation dose was sufficient to short circuit the silicon sensors. The dynamic behaviour of bias voltage, leakage currents and voltages over coupling capacitors were monitored during the impact. Results of pre- and post-qualification as well as the dynamic behaviour are shown.
id cern-802350
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling cern-8023502019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.011http://cds.cern.ch/record/802350engFahrer, MDirkes, GHartmann, FHeier, SMacPherson, AMuller, T HWeiler, T hBeam-loss-induced electrical stress test on CMS Silicon Strip ModulesDetectors and Experimental TechniquesBased on simulated LHC beam loss scenarios, fully depleted CMS silicon tracker modules and sensors were exposed to 42 ns-long beam spills of approximately 10**1**1 protons per spill at the PS at CERN. The ionisation dose was sufficient to short circuit the silicon sensors. The dynamic behaviour of bias voltage, leakage currents and voltages over coupling capacitors were monitored during the impact. Results of pre- and post-qualification as well as the dynamic behaviour are shown.oai:cds.cern.ch:8023502004
spellingShingle Detectors and Experimental Techniques
Fahrer, M
Dirkes, G
Hartmann, F
Heier, S
MacPherson, A
Muller, T H
Weiler, T h
Beam-loss-induced electrical stress test on CMS Silicon Strip Modules
title Beam-loss-induced electrical stress test on CMS Silicon Strip Modules
title_full Beam-loss-induced electrical stress test on CMS Silicon Strip Modules
title_fullStr Beam-loss-induced electrical stress test on CMS Silicon Strip Modules
title_full_unstemmed Beam-loss-induced electrical stress test on CMS Silicon Strip Modules
title_short Beam-loss-induced electrical stress test on CMS Silicon Strip Modules
title_sort beam-loss-induced electrical stress test on cms silicon strip modules
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2003.11.011
http://cds.cern.ch/record/802350
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AT heiers beamlossinducedelectricalstresstestoncmssiliconstripmodules
AT macphersona beamlossinducedelectricalstresstestoncmssiliconstripmodules
AT mullerth beamlossinducedelectricalstresstestoncmssiliconstripmodules
AT weilerth beamlossinducedelectricalstresstestoncmssiliconstripmodules

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