Fluence Dependence of Charge Collection of irradiated Pixel Sensors

The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In...

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Detalles Bibliográficos
Autores principales: Rohe, T., Bortoletto, D., Chiochia, V., Cremaldi, L.M., Cucciarelli, S., Dorokhov, A., Hormann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, Kirill, Regenfus, Christian, Sanders, D.A., Son, S., Speer, T., Swartz, M.
Lenguaje:eng
Publicado: 2004
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2005.06.037
http://cds.cern.ch/record/807069

Internet

https://dx.doi.org/10.1016/j.nima.2005.06.037
http://cds.cern.ch/record/807069

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