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Superior radiation tolerance of thin epitaxial silicon detectors
For the LHC upgrade (fluences up to 10**1**6 p/cm**2) epi-Si devices are shown to be a viable solution. No type inversion was measured up to 1.3 multiplied by 10**1**524 GeV/c protons/cm**2 and the charge collection efficiency (CCE) remained close to 100%. For reactor neutrons CCE was measured to be...
| Autores principales: | , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.07.021 http://cds.cern.ch/record/807377 |