Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates

We have processed large-area strip sensors on silicon wafers grown by the magnetic Czochralski (MCZ) method. The n-type MCZ silicon wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Omega cm and oxygen concentration of less than 10 ppma. The Photoconductive Decay (PCD) measurements,...

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Detalles Bibliográficos
Autores principales: Härkönen, J, Tuominen, E, Tuovinen, E, Mehtälä, P, Lassila-Perini, K M, Ovchinnikov, V, Heikkilä, P, Ylikoski, M, Palmu, L, Kallijärvi, S, Nikkila, H, Anttila, O, Niinikoski, T O, Eremin, V, Ivanov, A, Verbitskaya, E
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.08.102
http://cds.cern.ch/record/808017

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