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Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology

Detalles Bibliográficos
Autor principal: Gromov, V
Lenguaje:eng
Publicado: CERN 2004
Materias:
Acceso en línea:https://dx.doi.org/10.5170/CERN-2004-010.333
http://cds.cern.ch/record/814312
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author Gromov, V
author_facet Gromov, V
author_sort Gromov, V
collection CERN
id cern-814312
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
publisher CERN
record_format invenio
spelling cern-8143122019-09-30T06:29:59Zdoi:10.5170/CERN-2004-010.333http://cds.cern.ch/record/814312engGromov, VDevelopment of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS TechnologyDetectors and Experimental TechniquesCERNoai:cds.cern.ch:8143122004
spellingShingle Detectors and Experimental Techniques
Gromov, V
Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
title Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
title_full Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
title_fullStr Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
title_full_unstemmed Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
title_short Development of the Bandgap Voltage Reference Circuit, Featuring Dynamic-Threshold MOS Transistors (DTMOST's) in 0.13um CMOS Technology
title_sort development of the bandgap voltage reference circuit, featuring dynamic-threshold mos transistors (dtmost's) in 0.13um cmos technology
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-2004-010.333
http://cds.cern.ch/record/814312
work_keys_str_mv AT gromovv developmentofthebandgapvoltagereferencecircuitfeaturingdynamicthresholdmostransistorsdtmostsin013umcmostechnology